About: http://webisa.webdatacommons.org/333324739

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	gate clamping device is formed in the P substrate, it may be formed in the P well electrically separated from the substrate in such a structure as shown in FIG. 14.
http://www.w3.org/ns/prov#wasQuotedFrom	patentgenius.com