| http://www.w3.org/ns/prov#value | - Si-MISFETs) or HBTs (GaAs-HBTs), the invention is not limited to these modes, but can aswell be applied to semiconductor devices having some other types of FETs or bipolar transistors such as metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) or GaAs-field effect transistors (GaAs-FETs).
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