| http://www.w3.org/ns/prov#value | - According to the present invention, there is a provided method for producing a p-type nitride semiconductor of BpAlqGarInsN (0???p???1, 0???q???1, 0???r???1, 0???s???1, p+q+r+s=1), wherein the p-type nitride semiconductor is grown at a growing rate of 4 ??m/hour or more.
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