PropertyValue
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  • As with the previously discussed species embodiment, the cell shown in FIGS. 3a, 3b and 3c can also be fabricated with alternate materials, but a preferred silicon based embodiment is as follows: The following processes are performed on a P type substrate 58P. A first mask is used to form the deep trenches 41c, 41d and 41e using a suitable means such as reactive ion etching.
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