| http://www.w3.org/ns/prov#value | - Specifically, a phase shift mask used in forming, in the photoresist 201, the pattern 201 a and so on for forming the contact holes reaching the source/drain diffusion layer 106 (refer to FIG. 2) and the trenches 131 (refer to FIG. 1) reaching the diffusion layer 106 a (refer to FIG. 3) will be taken for example to explain this embodiment.
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