PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • For forming the n-type collector buried layer 5, first, an oxide film (not shown) is formed on the p-type semiconductor substrate 1 by heat oxidation to a thickness of for example about 300 nm.
http://www.w3.org/ns/prov#wasQuotedFrom
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