| http://www.w3.org/ns/prov#value | - on of the silicon semiconductor substrate 201 (illustration omitted). [0141] Then, the pyrogenic oxidation is carried out at the temperature condition of 850??? C. by using the gas mixture of H2 and O2, and the gate oxide film 203 is formed on the region sectioned by the field oxide film 202 of the silicon substrate 201 with a thickness of for example 5 nm.
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