| http://www.w3.org/ns/prov#value | - Also in this case, two types of samples were prepared setting the thin-film forming temperature (the substrate temperature) of a Bi4 Ti3 O12 thin-film (growth layer) at 450??? C. and 500??? C. The time taken for the thin-film forming step of a Bi4 Ti3 O12 thin-film growth layer was around 30 sec for any sample.
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