| http://www.w3.org/ns/prov#value | - Next, these layers above are eliminated except for an area of the i-type InGaAs layer 72, the p-type InGaAs layer 73 and the p-type InGaAs layer 74 where the photodiode 20 is to be formed and an area of the n-type InGaAs layer 71 where the photodiode 20 and the capacitor 60 are to be formed, by an etching process using a sulfuric acid.
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