About: http://webisa.webdatacommons.org/344084481

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	Generally, the present invention is a method for forming a dual gate oxide (DGO) structure to support two different gate oxide devices on a single integrated circuit (IC).
http://www.w3.org/ns/prov#wasQuotedFrom	google.com.au