| http://www.w3.org/ns/prov#value | - A method for forming the oxide film is not particularly limited, and the oxide film may be formed by treating the surface of the amorphous semiconductor film 102 with ozone-containing water or an oxidizing solution such as a hydrogen peroxide solution, or may be formed by using a method for generating ozone by ultraviolet ray irradiation in an oxygen atmosphere, or the like (see FIG. 2A).
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