| http://www.w3.org/ns/prov#value | - first the impurities such as carbon, nitrogen, and oxygen to the semiconductor layer 2 and 2??? shown in FIG. 6(A) using the resist film as the mask, to achieve an impurity concentration in the range of from 1???1020 to 5???1021 cm???3 by ion-implantation (see FIG. 9(A)).
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