| http://www.w3.org/ns/prov#value | - Using the gate electrode as a mask, phosphorus ion is implanted in a self-alignment fashion to a dose of for example 5???1013 cm-2 so as to form the low-concentration source and drain region 6 serving as the electric field relaxation layer in the TFT. Patterning is then performed and for example phosphorus ion is implanted into th
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