| http://www.w3.org/ns/prov#value | - Beside the silicon nitride etch processes described by the aforementioned prior art inventions, traditional nitride etch process currently in use is a two-step process comprising a main step using SF6 and He in the gaseous plasma to get near the end point, and a second step of high Si3 N4 /SiO2 etch selectivity using SF6 and O2 in the gaseous plasma so as to prevent the occurrence of nonuniform pa
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