| http://www.w3.org/ns/prov#value | - 999Nec CorporationDoping technique for MOS devicesUS590269025 f???vr. 199711 mai 1999Motorola, Inc.Passivation layer at least partially surrounding the non-volatile magneto-resistive memory, the passivation layer including ferrite materials for shielding the non-volatile magneto-resistive memory from stray magnetic fieldsUS59096188 juil. 19971 juin 1999Micron Technology, Inc.Method of making memor
|
