| http://www.w3.org/ns/prov#value | - Referring to FIG. 16, an isotropic etch or an etch including an isotropic component (i.e., an etch that is not 100% anisotropic) is employed to remove sidewall portions of the non-conformal work function metal layer 74L. A remaining portion of the work function metal layer 74L located on a horizontal portion of the gate dielectric layer 70L within the recessed region, i.e., within the gate cavity
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