| http://www.w3.org/ns/prov#value | - Referring now to FIG. 3c, second dielectric layer 22 is formed from a material such as silicon dioxide to a thickness in the range of from about 3,000 angstroms to about 10,000 angstroms, preferably about 7,000 angstroms, using techniques such as CVD. A photomask 38 is placed over the surface of second dielectric layer 22 and a second via 40, substantially in alignment with first via 34, is formed
|
