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http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	ed byCiting PatentFiling datePublication dateApplicantTitleUS6953983 *Dec 8, 2003Oct 11, 2005Micron Technology, Inc.Low dielectric constant STI with SOI devicesUS8264016 *Jul 14, 2010Sep 11, 2012Infineon Technologies Austria AgSemiconductor device including a channel stop zoneUS20120012902 *Jul 14, 2010Jan 19, 2012Infineon Technologies Austria AgSemiconductor Device Including a Channel Stop Zone*
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