| http://www.w3.org/ns/prov#value | - es the side of the stepped portion to such a depth as reaching the insulating film, thereby forming an opening in the interlevel dielectric film; etching anisotropically part of the insulating film that is exposed on the bottom of the opening of the interlevel dielectric film, thereby forming an insulating sidewall spacer out of the insulating film on the side of the stepped portion and partially
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