| http://www.w3.org/ns/prov#value | - ed solution of hydrofluoric acid (HF) and sulfuric acid (H2SO4) is in. [0120] In this way, a semiconductor device comprising the layer 21 including an element, the binding material 22, and the etching stopper film 24 is completed on the etching stopper film 22. [0121] In addition, even though it is not illustrated here, a magnet sheet can be pasted by using a binding material to contact either wit
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