| http://www.w3.org/ns/prov#value | - 20100327376Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same - A method forms a metal high dielectric constant (MHK) transistor and includes: providing a MHK stack disposed on a substrate, the MHK stack including a first layer of high dielectric constant material, a second overlying layer, and a third overlying layer; selectively remov
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