| http://www.w3.org/ns/prov#value | - Referring now to FIG. 18, a schematic block diagram is illustrated that depicts a system 800 for forming a thin film of conductivity facilitating material (e.g., copper sulfide (Cu2S, Cus)) on a layer of conductive material (e.g., copper) in accordance with one or more aspects of the present invention, and more particularly via a plasma enhanced chemical vapor deposition process (PECVD) utilizing
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