| http://www.w3.org/ns/prov#value | - Here, the photoresist on the wafer surface is developed after being exposed with the optimal focus gained according to the method of focus monitoring of the above described seventh and eighth embodiments, thereby, the photoresist is patterned so that processes, such as etching or ion injection, can be carried out on the film that is the lower layer of the resist pattern by using the resist pattern
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