| http://www.w3.org/ns/prov#value | - Here, as shown in FIG. 12, a pattern is formed by making an offset of ??x in a direction of minus X from such state as shown in FIG. 11 so that overlap 24a between gate electrode 21 and source electrode 23 can be increased at the time of exposure of drain electrode 22 and source electrode 23, whereby the storage capacity between gate electrode 21 and source electrode 23 of TFT 14 is increased from
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