| http://www.w3.org/ns/prov#value | - Methods of the present invention can be used to deposit a metal-containing layer, preferably an oxide layer, on a variety of substrates, such as a semiconductor wafer (e.g., silicon wafer, gallium arsenide wafer, etc.), glass plate, etc., and on a variety of surfaces of the substrates, whether it be directly on the substrate itself or on a layer of material deposited on the substrate as in a semic
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