| http://www.w3.org/ns/prov#value | - 11, 2010Sep 3, 2013The Regents Of The University Of CaliforniaField-effect transistor with compositionally graded nitride layer on a silicaon substrateUS8541787Jul 15, 2009Sep 24, 2013Cree, Inc.High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capabilityUS8563372Feb 11, 2010Oct 22, 2013Cree, Inc.Methods of forming contact structures including alternating m
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