| http://www.w3.org/ns/prov#value | - Next, the gate metal layer and the ferroelectric inorganic layer are patterned by a photolithography process and an etching process using a first mask, thereby providing the gate pattern including the gate line 2, the gate electrode 8, and the sub gate insulating pattern 52 overlapping the gate pattern as shown in FIG. 6A. The gate metal has a single-layer or double-layer structure of chrome (Cr),
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