| http://www.w3.org/ns/prov#value | - e layer; said delineation including the active region in the epitaxial layer of silicon down to the sapphire by using reactive ion etching to form an island; removing the photoresist and oxidizing the edges of the island using the silicon nitride layer as a mask; selectively removing the oxide on the edges of the island; establishing vapor diffusion of boron ions into the opposed edges of the isla
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