| http://www.w3.org/ns/prov#value | - An n-type impurity such as tin (Sn) or silicon (Si) is selectively diffused into the semi-insulating GaAs contact layer 106 to form an n-type diffusion area 940 extending to the AlxGa1???xAs layer 105 below opening 107 b in the inter-layer insulating film 107.
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