| http://www.w3.org/ns/prov#value | - As the gate insulating film IG having the dielectric constant higher than that of silicon oxide, there is an insulating film mainly made of, for example, silicon oxynitride (SiOxNy), silicon nitride (SixNy), tantalum oxide (Ta2O5), titanium oxide (TiO2), aluminum oxide (Al2O3), hafnium oxide (HfO2), or hafnium-silicon-oxynitride (HfSiON).
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