| http://www.w3.org/ns/prov#value | - The layer 26 is deposited by a low pressure chemical vapor deposition, for example, using a reactant gas mixture containing silane (SiH4), and doped with an N-type dopant, such as phosphorus (P) either by ion implantation of during the polysilicon deposition by adding, for example, phosphine (PH3) to the CVD reactant gas.
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