| http://www.w3.org/ns/prov#value | - Source and drain regions 414 and 416 composed of a high concentration n-type amorphous silicon film are formed on both sides of the insulating film 490 for protecting the channel, and a source electrode 431 and a repeater electrode 492 composed of a sputtering film such as chromium, aluminum or titanium are formed on the source and drain regions 414 and 416.
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