| http://www.w3.org/ns/prov#value | - FIG. 4A is an exemplary process for fabricating an upper part of the housing of the gap changing microelectromechanical capacitive device in FIGS. 1A, 1B, and 1C. As illustrated in step (A) of FIG. 4A, a cavity is formed by etching (e.g., a wet chemical etching, a dry etching, etc.) a substrate 402 (e.g., a silicon, a glass, etc.) once a mask is applied to the substrate 402.
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