| http://www.w3.org/ns/prov#value | - A dry etch process (such as reactive ion etching) is then used to form the gate stack (step 212). [0034] After the gate stack is formed, nitride insulating spacers 114A and 114B can optionally be formed using known methods, such as by LPCVD or PECVD nitride (step 214).
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