| http://www.w3.org/ns/prov#value | - GaN layer formed on the undoped AlGaN layer and disposed between the source electrode and the drain electrode; and a gate electrode formed on the P-type GaN layer, wherein the undoped GaN layer includes an active region including a channel and an inactive region not including the channel, and the P-type GaN layer is disposed to surround the source electrode.2012-03-22
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