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http://webisa.webdatacommons.org/367770900
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http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value
The gate insulating film 107 is formed by a plasma CVD method or a sputtering method and made from an insulating film including silicon, having its thickness set to be 40 nm to 150 nm.
http://www.w3.org/ns/prov#wasQuotedFrom
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