About: http://webisa.webdatacommons.org/37540074

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	In an embodiment of the present invention, the gate dielectric layer 422 is a silicon oxynitride film formed to a thickness of between 5-20???.
http://www.w3.org/ns/prov#wasQuotedFrom	google.de