| http://www.w3.org/ns/prov#value | - Once the etch-stop, dielectric, and hard mask layers have been formed at 6???10, a patterned resist mask is formed over the hard mask layer at 12, using any appropriate resist materials and photolithographic patterning techniques as are known, so as to provide a pattern to be used in forming trenches, vias, or other openings in the underlying hard mask, dielectric, and/or etch-stop layers.
|
