| http://www.w3.org/ns/prov#value | - Alternatively, the amorphous silicon film may also be doped with boron (B) during the deposition process thereof. [0293] Thereafter, an insulating film including silicon is deposited thereon as a gate insulating film 106 to a thickness of about 10 nm to about 150 nm by a plasma CVD process or a sputtering process.
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