About: http://webisa.webdatacommons.org/377133348

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	Further, in the invention described above, a method of manufacturing a semiconductor device is characterized in that the barrier layer is a porous film formed with a film thickness of 1 to 10 nm.
http://www.w3.org/ns/prov#wasQuotedFrom	google.fr