| http://www.w3.org/ns/prov#value | - A Ga0.85In0.15N layer about 3 nm thick is formed on the n-guide layer 105, as a well layer, while concurrently supplying N2 or H2, NH3, TMG, and TMI. A layer of about 5 nm in thickness of GaN is formed on the well layer, as a barrier layer, under conditions concurrently supplying N2 or H2, NH3, and TMG. Another two pairs of layers, each including a well layer and a barrier layer are laminated unde
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