| http://www.w3.org/ns/prov#value | - -aligned mushroom gate from said coating of titantium-tungsten; doping with selected donor implants all areas of the top surface of said gallium arsenide wafer which are not covered by said self-aligned mushroom gate, said selected donor implants being selected from materials, including sulfur, which will diffuse laterally upon annealing; activating said selected donor implants by annealing them s
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