| http://www.w3.org/ns/prov#value | - a number of access transistors, at least one access transistor including a gate coupled to a dielectric layer, the dielectric layer disposed on a silicon body region between a source region and a drain region on a silicon substrate, the dielectric layer having a dielectric film structured as one or more monolayers of a metal oxide, the dielectric film having a surface with a roughness less than or
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