| http://www.w3.org/ns/prov#value | - ate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film covering said levels of said microelectronic device and the vias; spin-coating on said first film a radiation sensitive resist film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxi
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