| http://www.w3.org/ns/prov#value | - a number of access transistors, each access transistor including a gate coupled to and contacting a film, the film containing a layer of HfAlO3 and a layer of HfO2 such that the layer of HfAlO3 a thickness, the thickness being essentially equal to a minimum number of monolayers of HfAlO3 to provide a bulk band gap of the HfAlO3, the film formed on a body region between a first and a second source/
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