| http://www.w3.org/ns/prov#value | - Said cell comprises a semiconductor substrate including a source and a drain region and a channel therebetween, a floating gate extending over a portion of said channel, a control gate extending over another...http://www.google.com/patents/US6058043?utm_source=gb-gplus-sharePatent US6058043 - Method of erasing a memory device and a method of programming a memory device for low-voltage and low-powe
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