| http://www.w3.org/ns/prov#value | - Each memory cell described herein has a floating electrode, such as a floating gate electrode in a floating gate field-effect electrode and the insulator is lower than the barrier energy between polysilicon and SiO2, which is approximately 3.3 eV. Each memory cell also provides large transconductance gain, which provides a more easily detected signal and reduces the required data storage capacitan
|
