| http://www.w3.org/ns/prov#value | - U.S. Pat. No. 6,114,259, assigned to the assignee of this invention, and the subject matter of which is hereby incorporated by reference, teaches removal of the photoresist mask used to form openings such as vias in low kcarbon-doped silicon oxide dielectric material in a two step process. wherein the etched via sidewalls of the low k carbon-doped silicon oxide dielectric material are first treate
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