| http://www.w3.org/ns/prov#value | - a semiconductor substrate including a silicided active region formed on a main surface thereof and a non-active region provided by device-isolation on the same surface; an interlayer insulation film formed on the substrate; and a conductor pad formed in a predetermined-patterned shape on the insulation film, wherein a shield/planarization portion, in which an area ratio of the active region to the
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