| http://www.w3.org/ns/prov#value | - a metal gate electrodeUS7833865May 5, 2008Nov 16, 2010Kabushiki Kaisha ToshibaMethod of manufacturing a semiconductor device including a LaAIO3 layerUS7858536Sep 20, 2007Dec 28, 2010Kabushiki Kaisha ToshibaSemiconductor device and method for manufacturing semiconductor deviceUS7863202Dec 20, 2007Jan 4, 2011Qimonda AgHigh dielectric constant materialsUS7883951Nov 2, 2006Feb 8, 2011Intel Corporatio
|
